cystech electronics corp. spec. no. : c 962c6 issued date : 20 14.07.31 revised date : page no. : 1 / 8 MTP1067C6 cyste k product specification p - channel enhancement mode mosfet MTP1067C6 features ? high speed switching ? low - voltage drive( - 1.8v) ? easily designed drive circuits ? easy to use in parallel ? pb - free lead plating and halogen - free package equivalent circuit outline ordering information device package shipping MTP1067C6 - 0 - t1 - g sot - 563 ( pb - free lead plating and halogen - free package ) 3000 pcs / tape & reel sot - 5 63 MTP1067C6 d d s d d g bv dss - 20v i d - 1.06a r dson(typ) v gs = - 4.5v, i d = - 1.06a 0.112 v gs = - 2.5v, i d = - 1.0a 0.149 v gs = - 1 .8v, i d = - 0.49a 0.206 environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pcs / tape & reel,7 reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c 962c6 issued date : 20 14.07.31 revised date : page no. : 2 / 8 MTP1067C6 cyste k product specification absolute max imum ratings (ta=25 ? c , unless otherwise specified ) parameter symbol limits unit drain - sour c e voltage v dss - 20 v gate - source voltage v gss 12 continuous drain current @ v gs = - 4.5v, t a =25 ? c i d - 1.06 a continuous drain current @ v gs = - 4.5v, t a =70 ? c - 0.8 5 pulsed drain current i dm - 8 (note 1 ) power dissipation t a =25 ? c p d 236 (note 2 ) mw t a =70 ? c 151 (note 2 ) operating junction and storage temperature range tj ; tstg - 55~+150 ? c thermal data par ameter symbol typical maximum unit thermal resistance, junction - to - ambient (note 2) r ja 440 530 ? c /w thermal resistance, junction - to - ambient, steady state (note 2) 540 650 note : 1. pulse test, pulse width 300 s, duty 2% 2 .when device is mo unted on a 1 1 fr - 4 board, t 5s. electrical characteristics (ta=25 ? c , unless otherwise specified ) symbol min. typ. max. unit test conditions static bv dss* - 20 - - v v gs =0v, i d = - 250 a v gs(th) - 0.45 - - 0.95 v ds = v gs , i d = - 250 a i gss - - 1 00 n a v gs = 12 v , v ds =0v i dss - - - 1 a v ds = - 2 0 v, v gs =0v - - - 10 v ds = - 2 0 v, v gs =0v, t j =85 c r ds(on)* - 0.112 0.150 ? v gs = - 4.5v, i d = - 1.06 a - 0.149 0.200 v gs = - 2.5v, i d = - 1.0 a - 0.206 0.250 v gs = - 1.8v, i d = - 0.49 a g fs - 2.7 - s v ds = - 10v , i d = - 1.06a dynam ic c iss - 386 - pf v ds = - 10v, v gs =0, f=1mhz c oss - 37 - c rss - 32 - qg - 4.3 - nc v ds = - 10v, i d = - 1.06a, v gs = - 4.5v qgs - 0.69 - qgd - 1.01 - t d(on) - 7 10.5 ns v dd = - 10v, i d = - 0.76a, v gs = - 4.5v, r g =1 t r - 17.4 26 t d(off) - 26.4 40 t f - 6.4 9.6 rg - 10.5 15 ? f=1mhz
cystech electronics corp. spec. no. : c 962c6 issued date : 20 14.07.31 revised date : page no. : 3 / 8 MTP1067C6 cyste k product specification source - drain diode i s - - - 1.06 a i sm - - - 8 v sd - - 0.8 - 1.2 v i s = - 0.63a, v gs =0v trr* - 5.3 - ns i f = - 1a, di f /dt=100a/ s qrr* - 2.1 - nc ta - 4.8 - ns tb - 0.5 - ns *pulse test : pulse width ? 3 0 0s, duty cycle ? 2%
cystech electronics corp. spec. no. : c 962c6 issued date : 20 14.07.31 revised date : page no. : 4 / 8 MTP1067C6 cyste k product specification typical characteristics typical output characteristics 0 1 2 3 4 5 6 7 8 0 0.5 1 1.5 2 2.5 3 3.5 4 -v ds , drain-source voltage(v) -i d , drain current (a) -v gs =2v -v gs =1.5v -v gs =5v, 4.5v, 4v , 3.5v, 3v, 2.5v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 0 50 100 150 200 250 300 0.001 0.01 0.1 1 -i d , drain current(a) r ds( on) , static drain-source on-state resistance( m ) -v gs =2v -v gs =1. 8 v -v gs =1. 5 v -v gs = 3 v -v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 0.3 0.6 0.9 1.2 1.5 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) tj=25 c tj=150 c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 50 100 150 200 250 300 350 400 450 500 0 1 2 3 4 5 -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance( m ) i d = -1.06 a drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -25 25 75 125 175 tj, junction temperature( c) r ds(on) , normalized static drain- source on-state resistance v gs =- 4 .5v, i d =- 1.06 a r ds(on) @ tj=25c : 112m typ.
cystech electronics corp. spec. no. : c 962c6 issued date : 20 14.07.31 revised date : page no. : 5 / 8 MTP1067C6 cyste k product specification typical characteristics(co nt.) capacitance vs drain-to-source voltage 10 100 1000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -25 25 75 125 175 tj, junction temperature( c) -v gs(t h) , normalized threshold voltage i d =-250 a i d =-1ma single pulse power rating, junction to ambient 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja = 5 40c/w gate charge characteristics 0 1 2 3 4 5 0 1 2 3 4 5 6 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =- 1.06 a v ds =-10v maximum safe operating area 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c, v gs =-4.5v, r ja = 54 0c/w single pulse maximum drain current vs junctiontemperature 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 25 50 75 100 125 150 175 tj, junction temperature( c) -i d , maximum drain current(a) t a =25c, v gs =-4.5v, r ja = 54 0c/w
cystech electronics corp. spec. no. : c 962c6 issued date : 20 14.07.31 revised date : page no. : 6 / 8 MTP1067C6 cyste k product specification typical characteristics(cont.) forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-10v pulsed ta=25c transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =540 c/w
cystech electronics corp. spec. no. : c 962c6 issued date : 20 14.07.31 revised date : page no. : 7 / 8 MTP1067C6 cyste k product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c 962c6 issued date : 20 14.07.31 revised date : page no. : 8 / 8 MTP1067C6 cyste k product specification recommended wave soldering condition product peak temperature soldering time pb - free devices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temperature profile fo r ir reflow profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c /second max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seconds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of th e package, measured on the package body surface.
cystech electronics corp. spec. no. : c 962c6 issued date : 20 14.07.31 revised date : page no. : 9 / 8 MTP1067C6 cyste k product specification sot - 563 dimension dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0.021 0.024 0.525 0.600 b 0.007 0.011 0.170 0.270 a1 0.000 0.002 0.000 0.05 0 e 1 0.043 0.051 1.100 1.300 e 0.018 0.022 0.450 0.550 e 0.059 0.067 1.500 1.700 c 0.004 0.006 0.090 0.160 l 0.004 0.012 0.100 0.300 d 0.059 0.067 1.500 1.700 7 ref 7 ref notes : 1 . controlling dimension : millimeters. 2 . maximum lead thickness i ncludes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please contact your local cystek sales office. material : ? lead : pure tin plate d. ? mold compound : epoxy resin family, flammability solid burning class:ul94v - 0 . important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cyste k . ? cyste k reserves the right to make changes to its products without notice. ? cyste k semiconductor products are not warranted to be suitable for use in life - support applications, or systems. ? cyste k assumes no liability for any consequence of customer product design, infringement of pa tents, or application assistance. 6 - lead sot - 5 63 plastic surface mounted package cys te k package code: c6 style: pin 1. drain ( d ) pin 2. drain ( d ) pin 3. gate ( g ) pin 4. source ( s ) pin 5. drain ( d ) pin 6. drain ( d) marking: product code date code: year+month year: 6 2006, 7 2007 month: 1 1, 2 2, ??? 9 9, a 10, b 11, c 12 ac
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